间接带隙的Cs₂NaBiCl₆双钙钛矿材料具有近红外宽波段发射特性, 但低发光效率限制了其在近红外发光领域的应用。本工作通过共沉淀法快速制备微米级尺寸的Cs₂Ag_0.1Na_0.9BiCl₆:Tm³⁺双钙钛矿晶体, 实现了近红外荧光增强, 并系统研究了其光学吸收、光致发射(PL)、光致激发(PLE)、时间分辨光致发光和荧光量子效率(PLQY)等光学性能。共沉淀法制备的Cs₂Ag_0.1Na_0.9BiCl₆:Tm³⁺的光学带隙为3.06 eV。在350 nm紫外光激发下, 可以观察到峰值位于680 nm的近红外宽峰发射, 这源于自陷激子发光。通过引入Tm³⁺作为新的发光中心, 实现了810 nm波段的近红外发光增强, 在780~830 nm波段荧光量子效率(PLQY)从1.67%提高到11.77%, 提高了6.05倍。在650~900 nm波段, Cs₂Ag_0.1Na_0.9BiCl₆:Tm³⁺的近红外PLQY高达25.22%。本研究证明了共沉淀法快速制备的Cs₂Ag_0.1Na_0.9BiCl₆:Tm³⁺钙钛矿作为新型近红外光源材料的可行性。

Multilayer dielectric gratings (MLDGs) are crucial for pulse compression in picosecond–petawatt laser systems. Bulged nodular defects, embedded in coating stacks during multilayer deposition, influence the lithographic process and performance of the final MLDG products. In this study, the integration of nanosecond laser conditioning (NLC) into different manufacturing stages of MLDGs was proposed for the first time on multilayer dielectric films (MLDFs) and final grating products to improve laser-induced damage performance. The results suggest that the remaining nodular ejection pits introduced by the two protocols exhibit a high nanosecond laser damage resistance, which remains stable when the irradiated laser fluence is more than twice the nanosecond-laser-induced damage threshold (nanosecond-LIDT) of the unconditioned MLDGs. Furthermore, the picosecond-LIDT of the nodular ejection pit conditioned on the MLDFs was approximately 40% higher than that of the nodular defects, and the loss of the grating structure surrounding the nodular defects was avoided. Therefore, NLC is an effective strategy for improving the laser damage resistance of MLDGs.

随着人工智能、大数据、云计算、物联网、移动电子等的发展，传统的稀土离子掺杂单芯单模光纤放大器承载的光纤通信系统的传输容量已经逐渐接近香农极限，需要发展新型材料体系，以拓宽光纤通信系统的传输容量。相比于稀土离子，量子点具有较宽的发光带宽、可调波长的发光特性，且量子点的发光性质可以通过多种化学手段调控，在量子点光放大器上显示出了宽带光放大特性，受到学术界和产业界的广泛关注。在该背景下，本文提出将化学合成的PbS/CdS核壳量子点与低损耗聚合物集成，获得量子点掺杂光纤放大器，实现近红外通信波段可调波长、宽带光放大特性。文章研究并揭示了影响固化后的聚合物纤芯连续性的因素和影响机制，提出了降低固化胶前驱体液面附加压力、固化收缩力、聚合物前驱体与光纤内壁的摩擦力，并提高抽真空产生的牵引力以获得连续光纤，在此基础上获得了基于热固化聚二甲基硅氧烷（PDMS）和光固化NOA61、NOA85固化胶的纤芯连续光纤，量子点光纤在1 530~1 630 nm获得了增益带宽达到100 nm以上的开关增益，最高增益达到6.5 dB。本文的研究结果将促进量子点光纤器件和宽带光通信技术的发展。